Manufacturer: Texas Instruments
Win Source Part Number: 771882-CSD19505KTT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Family Name: CSD19505KTT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: DDPAK/TO-263-3
Channel Type Type: N
Drain Source Voltage: 80V
Vgs(th) (Maximum) @ Id: 3.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 76nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7920pF @ 40V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.1 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): CSD19505KTTT;
Introduction Date: March 21, 2016
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm 3-DDPAK/TO-263 -55 to 175 Product overview: CSD19505KTT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3.1 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.1 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19505KTT can be used for catalog matching and distributor lookup.
N-Channel 80V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 80V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 80V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
MOSFET N-CH 80V 200A DDPAK
MOSFET 80V, N-Channel NexFET Power Mosfet
MOSFET, N-CH, 80V, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:212A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 80V 200A DDPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 771882-CSD19505KTT | 278-CSD19505KTT | 296-44040-2-ND | CSD19505KTT | CSD19505KTT | 26AJ5579 | CSD19505KTT |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19505KTT | N-Channel 3.1 mOhm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 80V, To-263-3; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 300000 milliwatts | 300000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-3; TO-263 | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | ||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| Polarity | N-Channel | N-Channel; N-Channel |
