60V, N ch NexFET MOSFET™, single D2PAK, 4mOhm 3-DDPAK/TO-263 -55 to 175 Product overview: CSD18542KTTT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18542KTTT can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 200A/170A DDPAK
Manufacturer: Texas Instruments
Win Source Part Number: 771880-CSD18542KTTT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 170A (Tc)
Family Name: CSD18542KTT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: DDPAK/TO-263-3
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5070pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 4 mOhm @ 100A, 10V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
N-Channel 60V 200A (Ta), 170A (Tc) 250W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 60V 200A (Ta), 170A (Tc) 250W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 60V 200A (Ta), 170A (Tc) 250W (Tc) Surface Mount DDPAK/TO-263-3
MOSFET 60V N-Channel NexFET Pwr MOSFET
MOSFET N-CH 60V 200A/170A DDPAK
MOSFET, N-CH, 60V, 170A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-CSD18542KTTT | CSD18542KTTT | 771880-CSD18542KTTT | 296-44124-2-ND | CSD18542KTTT | CSD18542KTTT | 26AJ5575 |
| Product Name | 60V 4mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18542KTTT | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 170A, To-263-3; Transistor Polarity Texas Instruments |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | ||||||
| IDSS | 200000 milliamps | 170000 milliamps | |||||
| PD | 250000 milliwatts | 250000 milliwatts |
