60V, N ch NexFET MOSFET™, single D2PAK, 2mOhm 3-DDPAK/TO-263 -55 to 175 Product overview: CSD18535KTTT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18535KTTT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 771877-CSD18535KTTT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
Family Name: CSD18535KTT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: DDPAK/TO-263-3
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 81nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6620pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 2 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): CSD18535KTT;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surface Mount DDPAK/TO-263-3
MOSFET N-CH 60V 200A/279A DDPAK
MOSFET, N-CH, 60V, 279A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:279A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 200A/279A DDPAK
MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 2mOhm 3-DDPAK/TO-263 -55 to 175
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-CSD18535KTTT | 771877-CSD18535KTTT | 296-44121-1-ND | CSD18535KTTT | 29AH3841 | CSD18535KTTT | CSD18535KTTT |
| Product Name | 60V 2mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18535KTTT | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 279A, To-263-3; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 300000 milliwatts | 300000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-3; TO-263 | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | ||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| Polarity | N-Channel | N-Channel; N-Channel |
