N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6)
60V, N ch NexFET MOSFET™, single SON5x6, 4.6mOhm 8-VSONP -55 to 150 Product overview: CSD18531Q5AT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.6mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.6mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18531Q5AT can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 100A 8VSON
Manufacturer: Texas Instruments
Win Source Part Number: 771872-CSD18531Q5AT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-VSONP (5x6)
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3840pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.1W (Ta), 156W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.6 mOhm @ 22A, 10V
Alternative Parts (Cross-Reference): IRLH5036TRPBF; CSD18531Q5AT; CSD18531Q5A; DMT6005LPS-13;
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET 60V N-channel NexFET Power MOSFET
MOSFET N-CH 60V 100A 8VSON
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 296-41958-1-ND | 278-CSD18531Q5AT | CSD18531Q5AT | 771872-CSD18531Q5AT | CSD18531Q5AT | CSD18531Q5AT |
| Product Name | Single FETs, MOSFETs | 60V 4.6mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18531Q5AT | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | 8-PowerTDFN | 8-PowerTDFN | SOT3 | 8-PowerTDFN | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts |
