40V, N ch NexFET MOSFET™, single SON5x6, 4.9mOhm 8-VSONP -55 to 150 Product overview: CSD18514Q5AT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 4.9mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 4.9mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18514Q5AT can be used for catalog matching and distributor lookup.
N-Channel 40V 89A (Tc) 74W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 40V 89A (Tc) 74W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 40V 89A (Tc) 74W (Tc) Surface Mount 8-VSONP (5x6)
Win Source Part Number: 973216-CSD18514Q5AT
Category: Discrete Semiconductor Products>Transistors
Series: NexFET™
Package: Tape & Reel
Standard Package: 250
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSONP (5x6)
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Texas Instruments
Other Names: 296-45232-1,296-4523
Base Product Number: CSD18514
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 40V 89A 8VSON
MOSFET 40V N-Channel NexFET Power MOSFET
MOSFET N-CH 40V 89A 8VSON
MOSFET, N-CH, 40V, 89A, VSON; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-CSD18514Q5AT | 296-45232-6-ND | 973216-CSD18514Q5AT | CSD18514Q5AT | CSD18514Q5AT | CSD18514Q5AT | 52AH3717 |
| Product Name | 40V 4.9mOhm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 89A, Vson; Transistor Polarity Texas Instruments |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | 8-PowerTDFN | SOT3 | 8-PowerTDFN | 8-PowerTDFN | TO-3 | ||
| PD | 74000 milliwatts | 74000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
