Texas Instruments High-Performance Analog 30V 13.3mOhm MOSFET Transistor CSD17579Q5AT

30V, N ch NexFET MOSFET™, single SON5x6, 13.3mOhm 8-VSONP -55 to 150 Product overview: CSD17579Q5AT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13.3mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13.3mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17579Q5AT can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 25A 8VSON

N-Channel 30V 25A (Ta) 3.1W (Ta), 36W (Tc) Surface Mount 8-VSONP (5x6)

N-Channel 30V 25A (Ta) 3.1W (Ta), 36W (Tc) Surface Mount 8-VSONP (5x6)

N-Channel 30V 25A (Ta) 3.1W (Ta), 36W (Tc) Surface Mount 8-VSONP (5x6)

Manufacturer: Texas Instruments
Win Source Part Number: 1030620-CSD17579Q5AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 25A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 15.1nC @ 10V
Max Input Capacitance: 1030pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.7 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited