256KX8 NON-VOLATILE SRAM MODULE, 120ns, PDIP32 Product overview: BQ4014MB-120 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4014MB-120 can be used for catalog matching and distributor lookup.
Non-Volatile SRAM Module, 256KX8, 120ns, CMOS
Manufacturer: Texas Instruments
Win Source Part Number: 1154330-BQ4014MB-120
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 32-DIP Module (0.61", 15.49mm)
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 4.75 V ~ 5.5 V
Memory Type: Non-Volatile
Memory Size: 2Mb (256K x 8)
Access Time: 120ns
Part Status: Obsolete(EOL)
Family Name: bq4014
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Manufacturer Homepage: www.ti.com
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Manufacturer Package: 32-DIP Module (18.42x52.96)
Alternative Parts (Cross-Reference): DS1249Y-70+; DS1249AB-70+; DS1249AB-100+;
Introduction Date: September 01, 1992
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
NVSRAM (Non-Volatile SRAM) Memory IC 2Mb (256K x 8) Parallel 120ns 32-DIP Module (18.42x52.96)
IC NVSRAM 2MBIT PAR 32DIP MODULE
NVSRAM (Non-Volatile SRAM) Memory IC 2Mbit Parallel 120 ns 32-DIP Module (18.42x52.96)
IC NVSRAM 2M PARALLEL 32DIP
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-BQ4014MB-120 | BQ4014MB-120 | 1154330-BQ4014MB-120 | BQ4014MB-120-ND | BQ4014MB-120 | BQ4014MB-120 | 815-BQ4014MB-120 |
| Product Name | Memory IC and Storage Component | Memory - SRAM - BQ4014MB-120 | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | IC NVSRAM 2M PARALLEL 32DIP | |
| Memory Category | NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip | SRAM Chip | Non-Volatile | NVRAM; NVSRAM | Non-Volatile; SRAM Chip | NVSRAM; NVSRAM; SRAM Chip | NVRAM; Non-Volatile; SRAM Chip |
| Access Time | 120 ns | 120 ns | 120 ns | 120 ns | |||
| Operating Temperature | 0 C (32 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 2000 kbits | 2000 kbits | 2000 kbits | 2000 kbits | 16000 kbits | ||
| Address Bus Width | 8 bits | 8 bits |
