NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)
128KX8 NON-VOLATILE SRAM MODULE, 120ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32 Product overview: BQ4013YMA-120 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4013YMA-120 can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 770364-BQ4013YMA-120
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 32-DIP Module (0.61", 15.49mm)
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Non-Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 120ns
Part Status: Obsolete(EOL)
Family Name: BQ4013Y
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Manufacturer Package: 32-DIP Module (18.42x42.8)
Alternative Parts (Cross-Reference): DS1245Y-EMC; DS1245AB-100-IND; M48Z128-85PM1; DS1245AB-100-IND+;
Introduction Date: February 01, 2007
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)
IC NVSRAM 1MBIT PAR 32DIP MODULE
IC NVSRAM 1MBIT PAR 32DIP MODULE
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 296-32844-5-ND | 774-BQ4013YMA-120 | 770364-BQ4013YMA-120 | BQ4013YMA-120 | BQ4013YMA-120 | BQ4013YMA-120 |
| Product Name | Memory | DIP Memory IC and Storage Component | Memory - SRAM - BQ4013YMA-120 | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | NVRAM; NVSRAM | NVSRAM; Non-Volatile, , NVSRAM, RAM; SRAM Chip | NVRAM; Non-Volatile; SRAM Chip | NVSRAM; NVSRAM; SRAM Chip | Non-Volatile; SRAM Chip | NVSRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 C (32 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits | 1000 kbits | |
| Package Type | DIP; "32-DIP Module (0.610"", 15.49mm)" | DIP | DIP | DIP; 32-DIP Module (0.610\", 15.49mm) | ||
| Supply Voltage | 4.5V ~ 5.5V | -4.5V; 4.5V | 4.5 V ~ 5.5 V | 4.5V ~ 5.5V | Through Hole |
