Texas Instruments High-Performance Analog Memory - SRAM - BQ4013YMA-120 BQ4013YMA-120

Description
Manufacturer: Texas Instruments Win Source Part Number: 770364-BQ4013YMA-120 Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: 0°C ~ 70°C (TA) Package: 32-DIP Module (0.61", 15.49mm) Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Non-Volatile Memory Size: 1Mb (128K x 8) Access Time: 120ns Part Status: Obsolete(EOL) Family Name: BQ4013Y Categories: Integrated Circuits (ICs) Memory Format: NVSRAM Write Cycle Time - Word, Page: 120ns Memory Interface: Parallel Manufacturer Package: 32-DIP Module (18.42x42.8) Alternative Parts (Cross-Reference): DS1245Y-EMC; DS1245AB-100-IND; M48Z128-85PM1; DS1245AB-100-IND+; Introduction Date: February 01, 2007 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Texas Instruments Win Source Part Number: 770364-BQ4013YMA-120 Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: 0°C ~ 70°C (TA) Package: 32-DIP Module (0.61", 15.49mm) Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Non-Volatile Memory Size: 1Mb (128K x 8) Access Time: 120ns Part Status: Obsolete(EOL) Family Name: BQ4013Y Categories: Integrated Circuits (ICs) Memory Format: NVSRAM Write Cycle Time - Word, Page: 120ns Memory Interface: Parallel Manufacturer Package: 32-DIP Module (18.42x42.8) Alternative Parts (Cross-Reference): DS1245Y-EMC; DS1245AB-100-IND; M48Z128-85PM1; DS1245AB-100-IND+; Introduction Date: February 01, 2007 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
Memory - SRAM - BQ4013YMA-120 - 770364-BQ4013YMA-120 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - BQ4013YMA-120
770364-BQ4013YMA-120
Memory - SRAM - BQ4013YMA-120 770364-BQ4013YMA-120
Manufacturer: Texas Instruments Win Source Part Number: 770364-BQ4013YMA-120 Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: 0°C ~ 70°C (TA) Package: 32-DIP Module (0.61", 15.49mm) Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Non-Volatile Memory Size: 1Mb (128K x 8) Access Time: 120ns Part Status: Obsolete(EOL) Family Name: BQ4013Y Categories: Integrated Circuits (ICs) Memory Format: NVSRAM Write Cycle Time - Word, Page: 120ns Memory Interface: Parallel Manufacturer Package: 32-DIP Module (18.42x42.8) Alternative Parts (Cross-Reference): DS1245Y-EMC; DS1245AB-100-IND; M48Z128-85PM1; DS1245AB-100-IND+; Introduction Date: February 01, 2007 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 770364-BQ4013YMA-120
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 32-DIP Module (0.61", 15.49mm)
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Non-Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 120ns
Part Status: Obsolete(EOL)
Family Name: BQ4013Y
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Manufacturer Package: 32-DIP Module (18.42x42.8)
Alternative Parts (Cross-Reference): DS1245Y-EMC; DS1245AB-100-IND; M48Z128-85PM1; DS1245AB-100-IND+;
Introduction Date: February 01, 2007
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - 296-32844-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)

NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)

Buy Now Datasheet
Singapore, Singapore
DIP Memory IC and Storage Component
774-BQ4013YMA-120
DIP Memory IC and Storage Component 774-BQ4013YMA-120
128KX8 NON-VOLATILE SRAM MODULE, 120ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32 Product overview: BQ4013YMA-120 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4013YMA-120 can be used for catalog matching and distributor lookup.

128KX8 NON-VOLATILE SRAM MODULE, 120ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32 Product overview: BQ4013YMA-120 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4013YMA-120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - BQ4013YMA-120 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)

NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)

Buy Now Datasheet
IC NVSRAM 1MBIT PAR 32DIP MODULE

IC NVSRAM 1MBIT PAR 32DIP MODULE

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4013YMA-120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4013YMA-120
Integrated Circuits (ICs) - Memory - Memory BQ4013YMA-120
IC NVSRAM 1MBIT PAR 32DIP MODULE

IC NVSRAM 1MBIT PAR 32DIP MODULE

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 770364-BQ4013YMA-120 296-32844-5-ND 774-BQ4013YMA-120 BQ4013YMA-120 BQ4013YMA-120 BQ4013YMA-120
Product Name Memory - SRAM - BQ4013YMA-120 Memory DIP Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category NVRAM; Non-Volatile; SRAM Chip NVRAM; NVSRAM NVSRAM; Non-Volatile, , NVSRAM, RAM; SRAM Chip NVSRAM; NVSRAM; SRAM Chip NVSRAM; SRAM Chip Non-Volatile; SRAM Chip
Access Time 120 ns 120 ns 120 ns 120 ns
Cycle Time 120 ns 120 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 C (32 F) 0 to 70 C (32 to 158 F)
Package Type DIP DIP; "32-DIP Module (0.610"", 15.49mm)" DIP DIP; 32-DIP Module (0.610\", 15.49mm)
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