Manufacturer: Texas Instruments
Win Source Part Number: 201364-BQ4013MA-120
Packaging: Tray
Mounting: Through Hole
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Access Time: 120ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 32-DIP Module (18.42x42.8)
Supply Voltage - Operating: 4.75 V to 5.5 V
Memory Format: NVSRAM
Alternative Parts (Cross-Reference): CY14B101LA-SZ45XIT; M48Z128V-120PM1; BQ4013LYMA-70;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
NVRAM NVSRAM Parallel 1Mbit 5V 32-Pin DIP Module Product overview: BQ4013MA-120 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4013MA-120 can be used for catalog matching and distributor lookup.
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)
NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)
NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)
IC NVSRAM 1MBIT PAR 32DIP MODULE
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 201364-BQ4013MA-120 | 774-BQ4013MA-120 | BQ4013MA-120-ND | BQ4013MA-120 | BQ4013MA-120 |
| Product Name | Memory - SRAM - BQ4013MA-120 | 5V DIP Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | NVSRAM; SRAM Chip | NVRAM; NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip | NVRAM; NVSRAM | NVSRAM; NVSRAM; SRAM Chip | Non-Volatile; SRAM Chip |
| Access Time | 120 ns | 120 ns | 120 ns | ||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 C (32 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Package Type | DIP; 32-DIP Module (18.42x42.8) | Module | DIP; "32-DIP Module (0.610"", 15.49mm)" | DIP; 32-DIP Module (0.610\", 15.49mm) | |
| Supply Voltage | 4.75 V ~ 5.5 V | 4.75V | 4.75V ~ 5.5V | 4.75V ~ 5.5V | Through Hole |
