Texas Instruments High-Performance Analog Memory BQ4013MA-120

Description
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)
Request a Quote Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - BQ4013MA-120-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)

NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 120ns 32-DIP Module (18.42x42.8)

Buy Now Datasheet
5V DIP Memory IC and Storage Component - 774-BQ4013MA-120 - ERSAELECTRONICS PTE. LTD.
Singapore
5V DIP Memory IC and Storage Component
774-BQ4013MA-120
5V DIP Memory IC and Storage Component 774-BQ4013MA-120
NVRAM NVSRAM Parallel 1Mbit 5V 32-Pin DIP Module Product overview: BQ4013MA-120 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4013MA-120 can be used for catalog matching and distributor lookup.

NVRAM NVSRAM Parallel 1Mbit 5V 32-Pin DIP Module Product overview: BQ4013MA-120 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4013MA-120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SRAM - BQ4013MA-120 - 201364-BQ4013MA-120 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - BQ4013MA-120
201364-BQ4013MA-120
Memory - SRAM - BQ4013MA-120 201364-BQ4013MA-120
Manufacturer: Texas Instruments Win Source Part Number: 201364-BQ4013MA-120 Packaging: Tray Mounting: Through Hole Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Access Time: 120ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 32-DIP Module (18.42x42.8) Supply Voltage - Operating: 4.75 V to 5.5 V Memory Format: NVSRAM Alternative Parts (Cross-Reference): CY14B101LA-SZ45XIT; M48Z128V-120PM1; BQ4013LYMA-70; Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 201364-BQ4013MA-120
Packaging: Tray
Mounting: Through Hole
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Access Time: 120ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 32-DIP Module (18.42x42.8)
Supply Voltage - Operating: 4.75 V to 5.5 V
Memory Format: NVSRAM
Alternative Parts (Cross-Reference): CY14B101LA-SZ45XIT; M48Z128V-120PM1; BQ4013LYMA-70;
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4013MA-120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4013MA-120
Integrated Circuits (ICs) - Memory - Memory BQ4013MA-120
IC NVSRAM 1MBIT PAR 32DIP MODULE

IC NVSRAM 1MBIT PAR 32DIP MODULE

Supplier's Site
Memory - BQ4013MA-120 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)

NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)

Buy Now Datasheet
Memory - BQ4013MA-120 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)

NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit Parallel 120 ns 32-DIP Module (18.42x42.8)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number BQ4013MA-120-ND 774-BQ4013MA-120 201364-BQ4013MA-120 BQ4013MA-120 BQ4013MA-120
Product Name Memory 5V DIP Memory IC and Storage Component Memory - SRAM - BQ4013MA-120 Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category NVRAM; NVSRAM NVRAM; NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip NVSRAM; SRAM Chip Non-Volatile; SRAM Chip NVSRAM; NVSRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 C (32 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Package Type DIP; "32-DIP Module (0.610"", 15.49mm)" Module DIP; 32-DIP Module (18.42x42.8) DIP; 32-DIP Module (0.610\", 15.49mm)
Supply Voltage 4.75V ~ 5.5V 4.75V 4.75 V ~ 5.5 V Through Hole 4.75V ~ 5.5V
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