NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-DIP Module (18.42x37.72)
Non-Volatile SRAM Module, 32KX8, 150ns, PDMA28
32KX8 NON-VOLATILE SRAM MODULE, 150ns, PDIP28 Product overview: BQ4011YMA-150 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011YMA-150 can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1154327-BQ4011YMA-15
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 28-DIP Module (0.61", 15.49mm)
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Non-Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 150ns
Part Status: Obsolete(EOL)
Family Name: bq4011Y
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Manufacturer Homepage: www.ti.com
Write Cycle Time - Word, Page: 150ns
Memory Interface: Parallel
Manufacturer Package: 28-DIP Module (18.42x37.72)
Alternative Parts (Cross-Reference): M48Z35AY-10PC1; M48Z35AY-70PC1TR; M48Z35AY-10PC6;
Introduction Date: November 01, 2006
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Application Field: Used in Communications & Networking
IC NVSRAM 256KBIT PARALLEL 28DIP
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)
| DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | BQ4011YMA-150-ND | BQ4011YMA-150 | 774-BQ4011YMA-150 | 1154327-BQ4011YMA-150 | BQ4011YMA-150 | BQ4011YMA-150 |
| Product Name | Memory | Memory IC and Storage Component | Memory - SRAM - BQ4011YMA-150 | Integrated Circuits (ICs) - Memory - Memory | Memory | |
| Memory Category | NVRAM; NVSRAM | SRAM Chip | NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip | Non-Volatile | Non-Volatile; SRAM Chip | NVSRAM; NVSRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 C (32 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Package Type | DIP; "28-DIP Module (0.61"", 15.49mm)" | DIP; DIP28 | Module | DIP | DIP; 28-DIP Module (0.61\", 15.49mm) | |
| Supply Voltage | 4.5V ~ 5.5V | -4.5V; 4.5V | 4.5 V ~ 5.5 V | Through Hole | 4.5V ~ 5.5V | |
| Access Time | 150 ns | 150 ns | 150 ns |
