Texas Instruments High-Performance Analog Memory BQ4011YMA-100

Description
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 100ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 100ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 296-9392-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 100ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 100ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Memory - SRAM - BQ4011YMA-100 - 1154326-BQ4011YMA-100 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - BQ4011YMA-100
1154326-BQ4011YMA-100
Memory - SRAM - BQ4011YMA-100 1154326-BQ4011YMA-100
Manufacturer: Texas Instruments Win Source Part Number: 1154326-BQ4011YMA-10 0 Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: 0°C ~ 70°C (TA) Package: 28-DIP Module (0.61", 15.49mm) Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Non-Volatile Memory Size: 256Kb (32K x 8) Access Time: 100ns Part Status: Obsolete(EOL) Family Name: bq4011Y Categories: Integrated Circuits (ICs) Memory Format: NVSRAM Manufacturer Homepage: www.ti.com RoHS State: Request Verification Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Manufacturer Package: 28-DIP Module (18.42x37.72) Alternative Parts (Cross-Reference): M48Z35AY-10PC1; M48Z35AY-10PC6; M48Z35Y-70PC1TR; Introduction Date: November 01, 2006 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 1154326-BQ4011YMA-100
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 28-DIP Module (0.61", 15.49mm)
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Non-Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 100ns
Part Status: Obsolete(EOL)
Family Name: bq4011Y
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Manufacturer Homepage: www.ti.com
RoHS State: Request Verification
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Manufacturer Package: 28-DIP Module (18.42x37.72)
Alternative Parts (Cross-Reference): M48Z35AY-10PC1; M48Z35AY-10PC6; M48Z35Y-70PC1TR;
Introduction Date: November 01, 2006
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
256Kb DIP Memory IC and Storage Component - 774-BQ4011YMA-100 - ERSAELECTRONICS PTE. LTD.
Singapore
256Kb DIP Memory IC and Storage Component
774-BQ4011YMA-100
256Kb DIP Memory IC and Storage Component 774-BQ4011YMA-100
256Kb Non-Volatile SRAM, 100ns, 32Kx8, Parallel, DIP Product overview: BQ4011YMA-100 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 256Kb, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 256Kb, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011YMA-100 can be used for catalog matching and distributor lookup.

256Kb Non-Volatile SRAM, 100ns, 32Kx8, Parallel, DIP Product overview: BQ4011YMA-100 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 256Kb, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 256Kb, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011YMA-100 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC, NVSRAM, 256KBIT, 100NS, DIP-28 - 815-BQ4011YMA-100 - Utmel Electronic Limited
Hong Kong, China
IC, NVSRAM, 256KBIT, 100NS, DIP-28
815-BQ4011YMA-100
IC, NVSRAM, 256KBIT, 100NS, DIP-28 815-BQ4011YMA-100
IC, NVSRAM, 256KBIT, 100NS, DIP-28

IC, NVSRAM, 256KBIT, 100NS, DIP-28

Supplier's Site
IC NVSRAM 256KBIT PARALLEL 28DIP

IC NVSRAM 256KBIT PARALLEL 28DIP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4011YMA-100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4011YMA-100
Integrated Circuits (ICs) - Memory - Memory BQ4011YMA-100
IC NVSRAM 256KBIT PARALLEL 28DIP

IC NVSRAM 256KBIT PARALLEL 28DIP

Supplier's Site
Memory - BQ4011YMA-100 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 100 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 100 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 296-9392-5-ND 1154326-BQ4011YMA-100 774-BQ4011YMA-100 815-BQ4011YMA-100 BQ4011YMA-100 BQ4011YMA-100 BQ4011YMA-100
Product Name Memory Memory - SRAM - BQ4011YMA-100 256Kb DIP Memory IC and Storage Component IC, NVSRAM, 256KBIT, 100NS, DIP-28 Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category NVRAM; NVSRAM Non-Volatile NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip NVRAM; Non-Volatile; SRAM Chip NVSRAM; SRAM Chip Non-Volatile; SRAM Chip NVSRAM; NVSRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 C (32 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type DIP; "28-DIP Module (0.61"", 15.49mm)" DIP DIP DIP; 28-DIP Module (0.61, 15.49mm) DIP; 28-DIP Module (0.61\", 15.49mm)
Supply Voltage 4.5V ~ 5.5V 4.5 V ~ 5.5 V -4.5V; 4.5V 5V; 5V Through Hole 4.5V ~ 5.5V
Access Time 100 ns 100 ns 100 ns 100 ns 100 ns
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SP512K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
SN54ACT3632 512 x 36 x 2 Synchronous Bidirectional FIFO Memory - SN54ACT3632HFP - Texas Instruments
Specs
Memory Category FIFO
Package Type CFP
View Details
4 suppliers
Memory - 71V3556SA133BGG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.2 ns
Density 4500 kbits
View Details
Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details