Texas Instruments High-Performance Analog Memory BQ4011MA-200

The BQ4011MA-200 is a non-volatile static RAM (NVSRAM) memory device from Quarktwin Technology Ltd., featuring a capacity of 256Kbits organized as 32,768 words by 8 bits. It operates at a supply voltage of either 5V or 3.3V and is housed in a 28-pin DIP package. This memory device is designed for applications requiring data retention for at least 10 years without power, utilizing an internal lithium energy source to maintain data integrity during power-down conditions. The BQ4011MA-200 supports unlimited write cycles typical of standard SRAM, while its automatic write-protection feature activates during power-up and power-down cycles to prevent data corruption. The device includes control circuitry that monitors the supply voltage and automatically switches to the internal backup supply when the voltage falls below a specified threshold, ensuring continued data retention. The low standby current consumption makes it suitable for battery-operated applications. Engineers considering this product should note its compatibility with industry-standard SRAM pinouts, making it easy to integrate into existing designs.