NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-DIP Module (18.42x37.72)
Win Source Part Number: 1187613-BQ4011MA-150
Category: Integrated Circuits (ICs)>Memory
Package: Tube
Standard Package: 14
Technology: NVSRAM (Non-Volatile SRAM)
Memory Type: Non-Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 150 ns
Voltage - Supply: 4.75V ~ 5.5V
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: NVSRAM
Write Cycle Time - Word, Page: 150ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): BQ4011MA150;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Texas Instruments
Other Names: TEXTISBQ4011MA-150,2
Base Product Number: BQ4011
Product Status: Obsolete
NVRAM NVSRAM Parallel 256Kbit 5V 28-Pin DIP Module Product overview: BQ4011MA-150 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011MA-150 can be used for catalog matching and distributor lookup.
Non-Volatile SRAM Module, 32KX8, 150ns, PDMA28
IC NVSRAM 256KBIT PARALLEL 28DIP
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | BQ4011MA-150-ND | 1187613-BQ4011MA-150 | 774-BQ4011MA-150 | BQ4011MA-150 | BQ4011MA-150 | BQ4011MA-150 |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | 5V DIP Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | |
| Memory Category | NVRAM; NVSRAM | Non-Volatile; SRAM Chip | NVRAM; NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip | SRAM Chip | Non-Volatile; SRAM Chip | NVSRAM; NVSRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 C (32 F) | 0 to 70 C (32 to 158 F) | ||
| Package Type | DIP; "28-DIP Module (0.61"", 15.49mm)" | DIP | Module | DIP; DIP28 | DIP; 28-DIP Module (0.61\", 15.49mm) | |
| Supply Voltage | 4.75V ~ 5.5V | 4.75V ~ 5.5V | 4.75V | Through Hole | 4.75V ~ 5.5V | |
| Access Time | 150 ns | 150 ns | 150 ns |
