Texas Instruments High-Performance Analog Memory BQ4011MA-150

Description
Non-Volatile SRAM Module, 32KX8, 150ns, PDMA28
Request a Quote Datasheet
Description
Non-Volatile SRAM Module, 32KX8, 150ns, PDMA28
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BQ4011MA-150 - Rochester Electronics
Newburyport, MA, United States
Non-Volatile SRAM Module, 32KX8, 150ns, PDMA28

Non-Volatile SRAM Module, 32KX8, 150ns, PDMA28

Supplier's Site Datasheet
Memory - BQ4011MA-150-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 1187613-BQ4011MA-150 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1187613-BQ4011MA-150
Integrated Circuits (ICs) - Memory 1187613-BQ4011MA-150
Win Source Part Number: 1187613-BQ4011MA-150 Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 14 Technology: NVSRAM (Non-Volatile SRAM) Memory Type: Non-Volatile Memory Size: 256Kb (32K x 8) Access Time: 150 ns Voltage - Supply: 4.75V ~ 5.5V Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: NVSRAM Write Cycle Time - Word, Page: 150ns Memory Interface: Parallel Alternative Parts (Cross-Reference): BQ4011MA150; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Texas Instruments Other Names: TEXTISBQ4011MA-150,2 156-BQ4011MA-150-TI Base Product Number: BQ4011 Product Status: Obsolete

Win Source Part Number: 1187613-BQ4011MA-150
Category: Integrated Circuits (ICs)>Memory
Package: Tube
Standard Package: 14
Technology: NVSRAM (Non-Volatile SRAM)
Memory Type: Non-Volatile
Memory Size: 256Kb (32K x 8)
Access Time: 150 ns
Voltage - Supply: 4.75V ~ 5.5V
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: NVSRAM
Write Cycle Time - Word, Page: 150ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): BQ4011MA150;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Texas Instruments
Other Names: TEXTISBQ4011MA-150,2156-BQ4011MA-150-TI
Base Product Number: BQ4011
Product Status: Obsolete

Buy Now Datasheet
5V DIP Memory IC and Storage Component - 774-BQ4011MA-150 - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
5V DIP Memory IC and Storage Component
774-BQ4011MA-150
5V DIP Memory IC and Storage Component 774-BQ4011MA-150
NVRAM NVSRAM Parallel 256Kbit 5V 28-Pin DIP Module Product overview: BQ4011MA-150 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011MA-150 can be used for catalog matching and distributor lookup.

NVRAM NVSRAM Parallel 256Kbit 5V 28-Pin DIP Module Product overview: BQ4011MA-150 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4011MA-150 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - BQ4011MA-150 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4011MA-150 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4011MA-150
Integrated Circuits (ICs) - Memory - Memory BQ4011MA-150
IC NVSRAM 256KBIT PARALLEL 28DIP

IC NVSRAM 256KBIT PARALLEL 28DIP

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number BQ4011MA-150 BQ4011MA-150-ND 1187613-BQ4011MA-150 774-BQ4011MA-150 BQ4011MA-150 BQ4011MA-150
Product Name Memory Integrated Circuits (ICs) - Memory 5V DIP Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip NVRAM; NVSRAM Non-Volatile; SRAM Chip NVRAM; NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip NVSRAM; NVSRAM; SRAM Chip Non-Volatile; SRAM Chip
Package Type DIP; DIP28 DIP; "28-DIP Module (0.61"", 15.49mm)" DIP Module DIP; 28-DIP Module (0.61\", 15.49mm)
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 C (32 F) 0 to 70 C (32 to 158 F)
Supply Voltage 4.75V ~ 5.5V 4.75V ~ 5.5V 4.75V 4.75V ~ 5.5V Through Hole
Access Time 150 ns 150 ns 150 ns
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