Texas Instruments High-Performance Analog Memory BQ4011LYMA-70N

Description
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 296-22088-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4011LYMA-70N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4011LYMA-70N
Integrated Circuits (ICs) - Memory - Memory BQ4011LYMA-70N
IC NVSRAM 256KBIT PARALLEL 28DIP

IC NVSRAM 256KBIT PARALLEL 28DIP

Supplier's Site
Memory - BQ4011LYMA-70N - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 296-22088-5-ND BQ4011LYMA-70N BQ4011LYMA-70N
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category NVRAM; NVSRAM Non-Volatile; SRAM Chip NVSRAM; NVSRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type DIP; "28-DIP Module (0.61"", 15.49mm)" DIP; 28-DIP Module (0.61\", 15.49mm)
Supply Voltage 3V ~ 3.6V Through Hole 3.6V; 3V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 3354733 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details