Texas Instruments High-Performance Analog 5V DIP Memory IC and Storage Component BQ4010YMA-85N

Description
NVRAM NVSRAM Parallel 64Kbit 5V 28-Pin DIP Module Product overview: BQ4010YMA-85N from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010YMA-85N can be used for catalog matching and distributor lookup.
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Description
NVRAM NVSRAM Parallel 64Kbit 5V 28-Pin DIP Module Product overview: BQ4010YMA-85N from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010YMA-85N can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
5V DIP Memory IC and Storage Component - 774-BQ4010YMA-85N - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
5V DIP Memory IC and Storage Component
774-BQ4010YMA-85N
5V DIP Memory IC and Storage Component 774-BQ4010YMA-85N
NVRAM NVSRAM Parallel 64Kbit 5V 28-Pin DIP Module Product overview: BQ4010YMA-85N from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010YMA-85N can be used for catalog matching and distributor lookup.

NVRAM NVSRAM Parallel 64Kbit 5V 28-Pin DIP Module Product overview: BQ4010YMA-85N from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5V, DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 5V, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010YMA-85N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1223113-BQ4010YMA-85N - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1223113-BQ4010YMA-85N
Integrated Circuits (ICs) - Memory 1223113-BQ4010YMA-85N
Win Source Part Number: 1223113-BQ4010YMA-85 N Category: Integrated Circuits (ICs)>Memory Package: Tube Standard Package: 14 Technology: NVSRAM (Non-Volatile SRAM) Memory Type: Non-Volatile Memory Size: 64Kb (8K x 8) Access Time: 85 ns Voltage - Supply: 4.5V ~ 5.5V Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: NVSRAM Write Cycle Time - Word, Page: 85ns Memory Interface: Parallel Alternative Parts (Cross-Reference): BQ4010YMA85N; ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Texas Instruments Other Names: 2156-BQ4010YMA-85N-T I,TEXTISBQ4010YMA-85 N Base Product Number: BQ4010 Product Status: Obsolete

Win Source Part Number: 1223113-BQ4010YMA-85N
Category: Integrated Circuits (ICs)>Memory
Package: Tube
Standard Package: 14
Technology: NVSRAM (Non-Volatile SRAM)
Memory Type: Non-Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 85 ns
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: NVSRAM
Write Cycle Time - Word, Page: 85ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): BQ4010YMA85N;
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Texas Instruments
Other Names: 2156-BQ4010YMA-85N-TI,TEXTISBQ4010YMA-85N
Base Product Number: BQ4010
Product Status: Obsolete

Buy Now Datasheet
 - BQ4010YMA-85N - Rochester Electronics
Newburyport, MA, United States
Non-Volatile SRAM Module, 8KX8, 85ns, CMOS

Non-Volatile SRAM Module, 8KX8, 85ns, CMOS

Supplier's Site Datasheet
Memory - BQ4010YMA-85N-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 85ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 85ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Memory - BQ4010YMA-85N - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 85 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 85 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4010YMA-85N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4010YMA-85N
Integrated Circuits (ICs) - Memory - Memory BQ4010YMA-85N
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Rochester Electronics DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-BQ4010YMA-85N 1223113-BQ4010YMA-85N BQ4010YMA-85N BQ4010YMA-85N-ND BQ4010YMA-85N BQ4010YMA-85N
Product Name 5V DIP Memory IC and Storage Component Integrated Circuits (ICs) - Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category NVRAM; NVSRAM; Non-Volatile, , NVSRAM; SRAM Chip Non-Volatile; SRAM Chip SRAM Chip NVRAM; NVSRAM NVSRAM; NVSRAM; SRAM Chip Non-Volatile; SRAM Chip
Access Time 85 ns 85 ns 85 ns
Operating Temperature -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64 kbits 64 kbits 64 kbits
Address Bus Width 8 bits
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