Manufacturer: Texas Instruments
Win Source Part Number: 1154322-BQ4010YMA-70
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 28-DIP Module (0.61", 15.49mm)
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Non-Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 70ns
Part Status: Obsolete(EOL)
Family Name: BQ4010Y
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Manufacturer Homepage: www.ti.com
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Manufacturer Package: 28-DIP Module (18.42x37.72)
Alternative Parts (Cross-Reference): M48Z58Y-70PC6; M48Z58Y-70PC6TR; M48Z58Y-70PC1F;
Introduction Date: November 01, 2006
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
8KX8 NON-VOLATILE SRAM MODULE, 70ns, DMA28, DIP-28 Product overview: BQ4010YMA-70N from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, DIP, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010YMA-70N can be used for catalog matching and distributor lookup.
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
Non-Volatile SRAM Module, 8KX8, 70ns, CMOS
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)
IC NVSRAM 64KBIT PARALLEL 28DIP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1154322-BQ4010YMA-70N | 774-BQ4010YMA-70N | BQ4010YMA-70N-ND | BQ4010YMA-70N | BQ4010YMA-70N | BQ4010YMA-70N |
| Product Name | Memory - SRAM - BQ4010YMA-70N | DIP Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | |
| Memory Category | Non-Volatile; SRAM Chip | NVRAM; NVSRAM; SRAM Chip | NVRAM; NVSRAM | SRAM Chip | NVSRAM; NVSRAM; SRAM Chip | Non-Volatile; SRAM Chip |
| Access Time | 70 ns | 70 ns | 70 ns | |||
| Cycle Time | 70 ns | 70 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Package Type | DIP | DIP; "28-DIP Module (0.61"", 15.49mm)" | DIP; DIP28 | DIP; 28-DIP Module (0.61\", 15.49mm) |
