Texas Instruments High-Performance Analog Memory - SRAM - BQ4010YMA-70N BQ4010YMA-70N

Description
Manufacturer: Texas Instruments Win Source Part Number: 1154322-BQ4010YMA-70 N Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -40°C ~ 85°C (TA) Package: 28-DIP Module (0.61", 15.49mm) Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Non-Volatile Memory Size: 64Kb (8K x 8) Access Time: 70ns Part Status: Obsolete(EOL) Family Name: BQ4010Y Categories: Integrated Circuits (ICs) Memory Format: NVSRAM Manufacturer Homepage: www.ti.com Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Manufacturer Package: 28-DIP Module (18.42x37.72) Alternative Parts (Cross-Reference): M48Z58Y-70PC6; M48Z58Y-70PC6TR; M48Z58Y-70PC1F; Introduction Date: November 01, 2006 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Texas Instruments Win Source Part Number: 1154322-BQ4010YMA-70 N Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -40°C ~ 85°C (TA) Package: 28-DIP Module (0.61", 15.49mm) Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Non-Volatile Memory Size: 64Kb (8K x 8) Access Time: 70ns Part Status: Obsolete(EOL) Family Name: BQ4010Y Categories: Integrated Circuits (ICs) Memory Format: NVSRAM Manufacturer Homepage: www.ti.com Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Manufacturer Package: 28-DIP Module (18.42x37.72) Alternative Parts (Cross-Reference): M48Z58Y-70PC6; M48Z58Y-70PC6TR; M48Z58Y-70PC1F; Introduction Date: November 01, 2006 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
Memory - SRAM - BQ4010YMA-70N - 1154322-BQ4010YMA-70N - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - BQ4010YMA-70N
1154322-BQ4010YMA-70N
Memory - SRAM - BQ4010YMA-70N 1154322-BQ4010YMA-70N
Manufacturer: Texas Instruments Win Source Part Number: 1154322-BQ4010YMA-70 N Packaging: Tray Mounting Style: Through Hole Operating Temperature Range: -40°C ~ 85°C (TA) Package: 28-DIP Module (0.61", 15.49mm) Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Non-Volatile Memory Size: 64Kb (8K x 8) Access Time: 70ns Part Status: Obsolete(EOL) Family Name: BQ4010Y Categories: Integrated Circuits (ICs) Memory Format: NVSRAM Manufacturer Homepage: www.ti.com Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Manufacturer Package: 28-DIP Module (18.42x37.72) Alternative Parts (Cross-Reference): M48Z58Y-70PC6; M48Z58Y-70PC6TR; M48Z58Y-70PC1F; Introduction Date: November 01, 2006 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: Obsolete Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 1154322-BQ4010YMA-70N
Packaging: Tray
Mounting Style: Through Hole
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 28-DIP Module (0.61", 15.49mm)
Technology: NVSRAM (Non-Volatile SRAM)
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Non-Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 70ns
Part Status: Obsolete(EOL)
Family Name: BQ4010Y
Categories: Integrated Circuits (ICs)
Memory Format: NVSRAM
Manufacturer Homepage: www.ti.com
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Manufacturer Package: 28-DIP Module (18.42x37.72)
Alternative Parts (Cross-Reference): M48Z58Y-70PC6; M48Z58Y-70PC6TR; M48Z58Y-70PC1F;
Introduction Date: November 01, 2006
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
 - BQ4010YMA-70N - Rochester Electronics
Newburyport, MA, United States
Non-Volatile SRAM Module, 8KX8, 70ns, CMOS

Non-Volatile SRAM Module, 8KX8, 70ns, CMOS

Supplier's Site Datasheet
Memory - BQ4010YMA-70N-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Memory - BQ4010YMA-70N - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4010YMA-70N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4010YMA-70N
Integrated Circuits (ICs) - Memory - Memory BQ4010YMA-70N
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1154322-BQ4010YMA-70N BQ4010YMA-70N BQ4010YMA-70N-ND BQ4010YMA-70N BQ4010YMA-70N
Product Name Memory - SRAM - BQ4010YMA-70N Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Non-Volatile; SRAM Chip SRAM Chip NVRAM; NVSRAM NVSRAM; NVSRAM; SRAM Chip Non-Volatile; SRAM Chip
Access Time 70 ns 70 ns
Cycle Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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