Texas Instruments High-Performance Analog Memory BQ4010YMA-70

Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 296-9390-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4010YMA-70 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4010YMA-70
Integrated Circuits (ICs) - Memory - Memory BQ4010YMA-70
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site
Memory - BQ4010YMA-70 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 296-9390-5-ND BQ4010YMA-70 BQ4010YMA-70
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category NVRAM; NVSRAM Non-Volatile; SRAM Chip NVSRAM; NVSRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type DIP; "28-DIP Module (0.61"", 15.49mm)" DIP; 28-DIP Module (0.61\", 15.49mm)
Supply Voltage 4.5V ~ 5.5V Through Hole 4.5V ~ 5.5V
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