Texas Instruments High-Performance Analog Memory BQ4010YMA-70

Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
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Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 296-9390-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Memory - BQ4010YMA-70 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4010YMA-70 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4010YMA-70
Integrated Circuits (ICs) - Memory - Memory BQ4010YMA-70
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 296-9390-5-ND BQ4010YMA-70 BQ4010YMA-70
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category NVRAM; NVSRAM NVSRAM; NVSRAM; SRAM Chip Non-Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type DIP; "28-DIP Module (0.61"", 15.49mm)" DIP; 28-DIP Module (0.61\", 15.49mm)
Supply Voltage 4.5V ~ 5.5V 4.5V ~ 5.5V Through Hole
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