Texas Instruments High-Performance Analog Through-Hole 64Kb Memory IC and Storage Component BQ4010MA-70

Description
64Kb NVSRAM 8Kx8 70ns Parallel PDIP Through Hole Product overview: BQ4010MA-70 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 64Kb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Through-Hole, 64Kb, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010MA-70 can be used for catalog matching and distributor lookup.
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Description
64Kb NVSRAM 8Kx8 70ns Parallel PDIP Through Hole Product overview: BQ4010MA-70 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 64Kb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Through-Hole, 64Kb, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010MA-70 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Through-Hole 64Kb Memory IC and Storage Component - 774-BQ4010MA-70 - ERSAELECTRONICS PTE. LTD.
Singapore
Through-Hole 64Kb Memory IC and Storage Component
774-BQ4010MA-70
Through-Hole 64Kb Memory IC and Storage Component 774-BQ4010MA-70
64Kb NVSRAM 8Kx8 70ns Parallel PDIP Through Hole Product overview: BQ4010MA-70 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 64Kb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Through-Hole, 64Kb, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010MA-70 can be used for catalog matching and distributor lookup.

64Kb NVSRAM 8Kx8 70ns Parallel PDIP Through Hole Product overview: BQ4010MA-70 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 64Kb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Through-Hole, 64Kb, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010MA-70 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - BQ4010MA-70 - Rochester Electronics
Newburyport, MA, United States
Non-Volatile SRAM Module, 8KX8, 70ns, CMOS

Non-Volatile SRAM Module, 8KX8, 70ns, CMOS

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1381617-BQ4010MA-70 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1381617-BQ4010MA-70
Integrated Circuits (ICs) - Memory - Memory 1381617-BQ4010MA-70
Win Source Part Number: 1381617-BQ4010MA-70 Category: Integrated Circuits (ICs)>Memory>Memory Package: Tube Standard Package: 14 pcs Technology: NVSRAM (Non-Volatile SRAM) Memory Type: Non-Volatile Memory Size: 64Kbit Access Time: 70 ns Voltage - Supply: 4.75V ~ 5.5V Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: NVSRAM Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 49 pct. REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Texas Instruments Base Product Number: BQ4010 Product Status: Obsolete Memory Organization: 8K x 8 Moisture Sensitivity Level (MSL): 1 (Unlimited)

Win Source Part Number: 1381617-BQ4010MA-70
Category: Integrated Circuits (ICs)>Memory>Memory
Package: Tube
Standard Package: 14 pcs
Technology: NVSRAM (Non-Volatile SRAM)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Access Time: 70 ns
Voltage - Supply: 4.75V ~ 5.5V
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: NVSRAM
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Texas Instruments
Base Product Number: BQ4010
Product Status: Obsolete
Memory Organization: 8K x 8
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Memory - 296-32841-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Memory - BQ4010MA-70 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4010MA-70 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4010MA-70
Integrated Circuits (ICs) - Memory - Memory BQ4010MA-70
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-BQ4010MA-70 BQ4010MA-70 1381617-BQ4010MA-70 296-32841-5-ND BQ4010MA-70 BQ4010MA-70
Product Name Through-Hole 64Kb Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category NVRAM; NVSRAM; SRAM Chip SRAM Chip Non-Volatile; SRAM Chip NVRAM; NVSRAM NVSRAM; NVSRAM; SRAM Chip Non-Volatile; SRAM Chip
Access Time 70 ns 70 ns 70 ns
Operating Temperature 0 C (32 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 64 kbits 64 kbits 64 kbits
Address Bus Width 8 bits
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