Texas Instruments High-Performance Analog Integrated Circuits (ICs) - Memory - Memory BQ4010MA-70

Non-Volatile SRAM Module, 8KX8, 70ns, CMOS

Win Source Part Number: 1381617-BQ4010MA-70
Category: Integrated Circuits (ICs)>Memory>Memory
Package: Tube
Standard Package: 14 pcs
Technology: NVSRAM (Non-Volatile SRAM)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Access Time: 70 ns
Voltage - Supply: 4.75V ~ 5.5V
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: NVSRAM
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Texas Instruments
Base Product Number: BQ4010
Product Status: Obsolete
Memory Organization: 8K x 8
Moisture Sensitivity Level (MSL): 1 (Unlimited)

64Kb NVSRAM 8Kx8 70ns Parallel PDIP Through Hole Product overview: BQ4010MA-70 from Texas Instruments is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 64Kb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Through-Hole, 64Kb, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-BQ4010MA-70 can be used for catalog matching and distributor lookup.

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)