Texas Instruments High-Performance Analog Memory BQ4010MA-70

Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 296-32841-5-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 70ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet
 - BQ4010MA-70 - Rochester Electronics
Newburyport, MA, United States
Non-Volatile SRAM Module, 8KX8, 70ns, CMOS

Non-Volatile SRAM Module, 8KX8, 70ns, CMOS

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1381617-BQ4010MA-70 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1381617-BQ4010MA-70
Integrated Circuits (ICs) - Memory - Memory 1381617-BQ4010MA-70
Win Source Part Number: 1381617-BQ4010MA-70 Category: Integrated Circuits (ICs)>Memory>Memory Package: Tube Standard Package: 14 pcs Technology: NVSRAM (Non-Volatile SRAM) Memory Type: Non-Volatile Memory Size: 64Kbit Access Time: 70 ns Voltage - Supply: 4.75V ~ 5.5V Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: NVSRAM Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 49 pct. REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Texas Instruments Base Product Number: BQ4010 Product Status: Obsolete Memory Organization: 8K x 8 Moisture Sensitivity Level (MSL): 1 (Unlimited)

Win Source Part Number: 1381617-BQ4010MA-70
Category: Integrated Circuits (ICs)>Memory>Memory
Package: Tube
Standard Package: 14 pcs
Technology: NVSRAM (Non-Volatile SRAM)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Access Time: 70 ns
Voltage - Supply: 4.75V ~ 5.5V
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: NVSRAM
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Texas Instruments
Base Product Number: BQ4010
Product Status: Obsolete
Memory Organization: 8K x 8
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - BQ4010MA-70 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
BQ4010MA-70
Integrated Circuits (ICs) - Memory - Memory BQ4010MA-70
IC NVSRAM 64KBIT PARALLEL 28DIP

IC NVSRAM 64KBIT PARALLEL 28DIP

Supplier's Site
Memory - BQ4010MA-70 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 70 ns 28-DIP Module (18.42x37.72)

Buy Now Datasheet

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 296-32841-5-ND BQ4010MA-70 1381617-BQ4010MA-70 BQ4010MA-70 BQ4010MA-70
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category NVRAM; NVSRAM SRAM Chip Non-Volatile; SRAM Chip Non-Volatile; SRAM Chip NVSRAM; NVSRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type DIP; "28-DIP Module (0.61"", 15.49mm)" DIP; DIP28 DIP DIP; 28-DIP Module (0.61\", 15.49mm)
Supply Voltage 4.75V ~ 5.5V 4.75V ~ 5.5V Through Hole 4.75V ~ 5.5V
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