Texas Instruments High-Performance Analog BQ3285ESS-N

Description
BQ3285E RTC IC with 242x8 NVSRAM Alarm Wake-up
  • BQ3285ESS-N - Rochester Electronics
    Rochester Electronics
Request a Quote Datasheet
Description
BQ3285E RTC IC with 242x8 NVSRAM Alarm Wake-up
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- BQ3285ESS-N - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BQ3285ESS-N
BQ3285ESS-N
BQ3285E RTC IC with 242x8 NVSRAM Alarm Wake-up

BQ3285E RTC IC with 242x8 NVSRAM Alarm Wake-up

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Memory Chips
Product Number BQ3285ESS-N
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - JM38510/23113BFA - Quarktwin Technology Ltd.
Texas Instruments
Memory
JM38510/23113BFA
View Details
2 suppliers
SDRAM - 2420777 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420777
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
5V Memory IC and Storage Component - 774-MT5C1009CW70L883C - ERSAELECTRONICS PTE. LTD.
Micross Components, Inc.
5V Memory IC and Storage Component
MT5C1009CW70L883C
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory - 520966231016 - Lingto Electronic Limited
Infineon Technologies AG
Memory
520966231016
View Details
2 suppliers