EPCOS AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single EPC2212

Manufacturer: EPC Win Source Part Number: 1325232-EPC2212 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V Vgs (Max): +6V, -4V Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: Die ECCN: EAR99 Fake Threat In the Open Market: 72 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0040 Other Part Number: 917-1211-1,917-1211- 2,917-1211-6 Drive Voltage (Max Rds On, Min Rds On): 5V RoHS Status: ROHS3 Compliant