The EPC2212 is an automotive-grade 100 V enhancement-mode gallium nitride (GaN) FET designed for high-efficiency, high-frequency applications such as lidar, DC-DC converters, and class-D audio. It is supplied in a passivated die form with solder bars, featuring a die size of 2.1 x 1.6 mm and is suitable for surface mount mounting. The device has a typical on-resistance of 13.5 mΩ at 11 A and 5 V gate voltage, a continuous drain current rating of 18 A, and a gate-to-source voltage range of -4 V to +6 V. It operates over a junction temperature range of -55°C to 150°C, with thermal resistance from junction-to-case of 2 °C/W and junction-to-board of 4 °C/W. The FET meets AEC-Q101 standards and has zero reverse recovery charge. The package is supplied on 8 mm wide tape on a 7-inch reel with 4 mm pitch.
Manufacturer: EPC
Win Source Part Number: 1325232-EPC2212
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Vgs (Max): +6V, -4V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: Die
ECCN: EAR99
Fake Threat In the Open Market: 72
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0040
Other Part Number: 917-1211-1,917-1211-
Drive Voltage (Max Rds On, Min Rds On): 5V
RoHS Status: ROHS3 Compliant
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 1325232-EPC2212 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
