TDK Corporation RF Power Transistor DU2810S

DU2810S is an N-channel enhancement mode RF power MOSFET transistor designed for 10 W output at 2-175 MHz with a 28 V supply. It is packaged in a proprietary surface-mount case measuring 24.64-24.89 mm by 18.29-18.54 mm, with a thermal resistance of 2 °C/W. The device features a drain-source breakdown voltage of 65 V, a maximum drain current of 2.8 A, and power dissipation up to 35 W. Electrical characteristics include a gate threshold voltage of 2.0-6.0 V, input capacitance of 14 pF, output capacitance of 10 pF, and reverse capacitance of 4.6 pF at 28 V and 1 MHz. It delivers 13 dB power gain and 55% drain efficiency at 175 MHz with 10 W output, and withstands a load mismatch up to 20:1 VSWR. The part is RoHS compliant.