Tamura Corporation of America Gate Driver 2CG010BBC14N

Description
Overview Gate driver 2CG010BBC14N is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT. Features Ideal for drive of IGBT and SiC MOSFET Gate voltage : +18V/-2V ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit) Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise Fast response : about 100nsec(typ) Applications Industrial inverter, power conditioner
Request a Quote Datasheet
Description
Overview Gate driver 2CG010BBC14N is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT. Features Ideal for drive of IGBT and SiC MOSFET Gate voltage : +18V/-2V ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit) Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise Fast response : about 100nsec(typ) Applications Industrial inverter, power conditioner
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Gate Driver
2CG010BBC14N
Gate Driver 2CG010BBC14N
Overview Gate driver 2CG010BBC14N is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT. Features Ideal for drive of IGBT and SiC MOSFET Gate voltage : +18V/-2V ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit) Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise Fast response : about 100nsec(typ) Applications Industrial inverter, power conditioner

Overview

Gate driver 2CG010BBC14N is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.

Features

  • Ideal for drive of IGBT and SiC MOSFET
  • Gate voltage : +18V/-2V
  • ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit)
  • Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise
  • Fast response : about 100nsec(typ)

Applications

  • Industrial inverter, power conditioner
Supplier's Site Datasheet
Gate Drivers - 132-2CG010BBC14N-ND - DigiKey
Thief River Falls, MN, United States
Gate Driver IC

Gate Driver IC

Buy Now Datasheet
Gate Drivers - 2CG010BBC14N - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Gate Drivers
2CG010BBC14N
Gate Drivers 2CG010BBC14N
Half-Bridge Gate Driver IC Non-Inverting Module

Half-Bridge Gate Driver IC Non-Inverting Module

Buy Now Datasheet
Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers - 2CG010BBC14N - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
2CG010BBC14N
Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers 2CG010BBC14N
GATE DRIVER (CORE, +18/,-2V)

GATE DRIVER (CORE, +18/,-2V)

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Gate Drivers Gate Drivers Gate Drivers Gate Drivers
Product Number 2CG010BBC14N 132-2CG010BBC14N-ND 2CG010BBC14N 2CG010BBC14N
Product Name Gate Driver Gate Drivers Gate Drivers Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Driver Type Dual Gate Driver Dual Gate Driver
Output Configuration Noninverting Inverting; Noninverting
Output Current 43 amps
Supply Voltage 13 to 28 volts 13 to 28 volts 28 to 13 volts
Rise Time 500 ns 500 ns
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