Taizhou Electronics Co., Ltd. Transistors TPNTA4153NT1G

Description
20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 1 N-Channel SOT-523-3 MOSFETs ROHS
  • Transistors - TPNTA4153NT1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 1 N-Channel SOT-523-3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - TPNTA4153NT1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
TPNTA4153NT1G
Transistors TPNTA4153NT1G
20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 1 N-Channel SOT-523-3 MOSFETs ROHS

20V 800mA 180mΩ@4.5V,550mA 280mW 750mV@250uA 1 N-Channel SOT-523-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number TPNTA4153NT1G
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

RF FETs, MOSFETs - 2312-QPD1004ASRTR-ND - DigiKey
Qorvo
RF FETs, MOSFETs
QPD1004ASR
Specs
Package Type 8-VDFN Exposed Pad
View Details
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR - ALD210800PCL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR
ALD210800PCL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP16
View Details
4 suppliers
IGBT - 38302418 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI200U2A-060
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N5401RLRMG - 906274-2N5401RLRMG - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N5401RLRMG
2N5401RLRMG
Specs
Polarity PNP
Package Type TO-92; SOT3; TO-92 (TO-226)
View Details