TSM6N60CP ROG is a 600V N-channel power MOSFET in a TO-252 package, designed for power switching and motor drive applications. It has a continuous drain current of 6 A at 25°C and 4.2 A at 100°C, with a maximum drain-source on-state resistance of 1.25 Ω at 10V gate-source voltage. The device features a typical gate charge of 20.7 nC and includes a single pulse avalanche energy rating of 180 mJ. Thermal resistance from junction to case is 1.4 °C/W, and junction to ambient is 50 °C/W. The operating junction temperature ranges from -55°C to 150°C. The part is Halogen Free and meets RoHS compliance.
MOSFET N-CHANNEL 600V 6A TO252 Product overview: TSM6N60CP ROG from Taiwan Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TSM6N60CP ROG can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-TSM6N60CP ROG |
| Product Name | N-Channel 600V 6A TO252 MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 600 volts |
| PD | 89000 milliwatts |
