Taiwan Semiconductor Co., Ltd. Single FETs, MOSFETs TSM60NC165CIT C0G

The TSM60NC165CIT is an N-channel power MOSFET using Super-Junction technology, designed for high-performance switching applications such as power supplies and AC/DC LED lighting. It is packaged in an ITO-220TL case with a maximum drain-source voltage of 600 V, continuous drain current of 14 A at 25°C, and a maximum on-state resistance of 165 mΩ at 10 V gate-source voltage. The device has a total gate charge of 48 nC, single pulse avalanche energy of 702 mJ, and a junction-to-case thermal resistance of 1.54 °C/W. It is RoHS compliant and halogen-free, with an operating junction and storage temperature range of -55 to +150 °C.