Taiwan Semiconductor Co., Ltd. Single FETs, MOSFETs TSM60NB190CZ

The TSM60NB190CZ is an N-channel power MOSFET using Super-Junction technology, rated for 600V drain-source voltage and 18A continuous drain current at 25°C, with a maximum on-resistance of 0.19Ω. It is housed in a TO-220 package and features a gate charge of 31nC, single-pulsed avalanche energy of 212.9mJ, and a junction-to-case thermal resistance of 0.83°C/W. The device is RoHS compliant, halogen-free per IEC 61249-2-21, and meets ITO-220 and TO-220 package standards. It is tested for 100% UIS and suitable for power supply and AC/DC LED lighting applications.