Taiwan Semiconductor Co., Ltd. Single FETs, MOSFETs TSM60NB190CF

The TSM60NB190CF is an N-channel power MOSFET with a drain-source voltage rating of 600V, a continuous drain current of 18A at 25°C, and a maximum on-state resistance of 0.19Ω. It employs Super-Junction technology and is packaged in an ITO-220S case. The device supports a pulsed drain current of 54A and has a single pulse avalanche energy rating of 441mJ. It is rated for a junction and storage temperature range of -55°C to +150°C, with a junction-to-case thermal resistance of 2.1°C/W. The MOSFET is RoHS compliant, halogen-free per IEC 61249-2-21, and is designed for applications such as power supplies and AC/DC LED lighting.