Taiwan Semiconductor Co., Ltd. Single FETs, MOSFETs TSM085N03PQ33

The TSM085N03PQ33 is an N-channel power MOSFET designed for DC-DC converters, battery power management, and ORing FET/load switch applications. It is packaged in a PDFN33 case with a drain-source voltage rating of 30 V and a continuous drain current of 52 A at 25°C. The device has a maximum on-state resistance of 8.5 mΩ at V GS = 10 V and 13 A, and a gate charge of 7.2 nC. Thermal resistance from junction to case is 3.4 °C/W, and the operating junction and storage temperature range is -55 to +150 °C. The part is RoHS compliant, halogen-free per IEC 61249-2-21, and meets MSL 1 moisture sensitivity per J-STD-020.