The MMBT3906T is a PNP epitaxial silicon transistor designed for general-purpose amplification and switching in portable applications. It is packaged in an SOT-523F surface-mount case, with a maximum collector power dissipation of 250 mW and a collector current rating of 200 mA. The transistor has a collector-emitter voltage rating of -40 V and a collector-base breakdown voltage of -40 V. Its junction temperature ranges from -55 °C to 150 °C, and thermal resistance is 500 °C/W. The device meets UL flammability rating V0 and has moisture sensitivity level MSL 1. It is complemented by the NPN MMBT3904T.
Trans GP BJT PNP 40V 0.2A 250mW 3-Pin SOT-523FL T/R Product overview: MMBT3906T from Taiwan Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.2A, 250mW. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.2A, 250mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT3906T can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-MMBT3906T |
| Product Name | 40V 0.2A 250mW Bipolar Transistor |
| Package Type | Tape and Reel |
| Packing Method | Tape and Reel |
| IC(max) | 200 milliamps |
