Taiwan Semiconductor Co., Ltd. 40V 0.2A 250mW Bipolar Transistor MMBT3904T

Description
Trans GP BJT NPN 40V 0.2A 250mW 3-Pin SOT-523FL T/R Product overview: MMBT3904T from Taiwan Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.2A, 250mW. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.2A, 250mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT3904T can be used for catalog matching and distributor lookup.
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Description
Trans GP BJT NPN 40V 0.2A 250mW 3-Pin SOT-523FL T/R Product overview: MMBT3904T from Taiwan Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.2A, 250mW. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.2A, 250mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT3904T can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The MMBT3904T is an NPN epitaxial silicon transistor designed for general-purpose amplification and switching in portable applications. It is housed in an SOT-523F surface-mount package with dimensions specified in millimeters. The device has a collector-emitter voltage rating of 40 V, a collector current rating of 200 mA, and a power dissipation limit of 250 mW. Its junction temperature ranges from -55°C to 150°C. Electrical characteristics include a DC current gain (hFE) of 40 to 300 depending on collector current, a collector-emitter saturation voltage of 0.2 V to 0.95 V, and a current gain bandwidth product of 300 MHz. The package meets UL 94 V-0 flammability rating and JESD22-A1113B MSL 1 moisture sensitivity level. It is lead-free and solderable per MIL-STD-750/2026 and JESD22-A121.

Datasheet Summary
Powered by GS/AI

The MMBT3904T is an NPN epitaxial silicon transistor designed for general-purpose amplification and switching in portable applications. It is housed in an SOT-523F surface-mount package with dimensions specified in millimeters. The device has a collector-emitter voltage rating of 40 V, a collector current rating of 200 mA, and a power dissipation limit of 250 mW. Its junction temperature ranges from -55°C to 150°C. Electrical characteristics include a DC current gain (hFE) of 40 to 300 depending on collector current, a collector-emitter saturation voltage of 0.2 V to 0.95 V, and a current gain bandwidth product of 300 MHz. The package meets UL 94 V-0 flammability rating and JESD22-A1113B MSL 1 moisture sensitivity level. It is lead-free and solderable per MIL-STD-750/2026 and JESD22-A121.

Suppliers

Company
Product
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Singapore, Singapore
40V 0.2A 250mW Bipolar Transistor
276-MMBT3904T
40V 0.2A 250mW Bipolar Transistor 276-MMBT3904T
Trans GP BJT NPN 40V 0.2A 250mW 3-Pin SOT-523FL T/R Product overview: MMBT3904T from Taiwan Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.2A, 250mW. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.2A, 250mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT3904T can be used for catalog matching and distributor lookup.

Trans GP BJT NPN 40V 0.2A 250mW 3-Pin SOT-523FL T/R Product overview: MMBT3904T from Taiwan Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.2A, 250mW. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.2A, 250mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-MMBT3904T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Bipolar RF Transistors
Product Number 276-MMBT3904T
Product Name 40V 0.2A 250mW Bipolar Transistor
Package Type Tape and Reel
Packing Method Tape and Reel
IC(max) 200 milliamps
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