Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC550C A1G

NPN silicon transistor for switching applications, rated for 45 V collector-emitter voltage, 100 mA continuous collector current, and 500 mW power dissipation in a TO-92 package. Base-emitter voltage is 6 V, and current gain ranges from 420 to 800 for the C group. The device is housed in a plastic TO-92 case with matte tin-plated leads, complying with RoHS and UL 94 V-0 standards. It meets JESD 201 class 1A whisker test requirements and operates from -65°C to +150°C junction temperature.