Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC550B A1G

NPN silicon transistor for general-purpose switching and amplification, housed in a TO-92 package with dimensions up to 5.10 mm in length and 4.70 mm in body width, rated for 500 mW power dissipation, 45 V collector-emitter voltage, 100 mA continuous collector current, and 200 mA peak collector current, with DC current gain of 200 to 450 at 2 mA collector current and 5 V collector-emitter voltage. Meets UL 94 V-0 flammability rating, RoHS compliant, and JESD 201 class 1A whisker test. Designed for surface-mount and automated placement in applications such as SMPS, adapters, and DC/DC converters.