Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC549C B1G

NPN silicon transistor in TO-92 package for switching and linear applications, with a maximum collector-emitter voltage of 30 V, collector current of 100 mA, and power dissipation of 500 mW. Current gain (hFE) ranges from 420 to 800 for the C grade. Package is molded compound meeting UL 94 V-0 flammability rating, with matte tin plated leads compliant to J-STD-002 and JESD 201 class 1A. Weighs approximately 190 mg. RoHS compliant and halogen-free when marked with "G".