Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC548C B1G

NPN silicon transistor for switching and amplification, rated for 30V collector-emitter voltage and 100mA continuous collector current with 500mW power dissipation in a TO-92 package. Current gain (hFE) ranges from 420 to 800 for the C group. The device meets RoHS standards and uses a UL 94 V-0 rated epoxy molding compound. It is designed for low-power applications such as SMPS, adapters, lighting, and DC/DC converters.