Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC547C B1G

Description
Bipolar (BJT) Transistor NPN 45V 100mA 500mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 45V 100mA 500mW Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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NPN silicon transistor for general-purpose switching and amplification, available in a TO-92 package with dimensions up to 14.50 mm in height and 4.70 mm in body width. Rated for a collector-emitter voltage of 45 V, collector current of 100 mA, and power dissipation of 500 mW. Current gain (hFE) ranges from 420 to 800 for the C group. Junction and storage temperatures operate from -65 °C to +150 °C. Compliant with RoHS and meets UL 94 V-0 flammability rating. Packaged in bulk format with matte tin plated leads.

Datasheet Summary
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NPN silicon transistor for general-purpose switching and amplification, available in a TO-92 package with dimensions up to 14.50 mm in height and 4.70 mm in body width. Rated for a collector-emitter voltage of 45 V, collector current of 100 mA, and power dissipation of 500 mW. Current gain (hFE) ranges from 420 to 800 for the C group. Junction and storage temperatures operate from -65 °C to +150 °C. Compliant with RoHS and meets UL 94 V-0 flammability rating. Packaged in bulk format with matte tin plated leads.

Suppliers

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Single Bipolar Transistors - BC547CB1G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC547CB1G-ND
Single Bipolar Transistors BC547CB1G-ND
Bipolar (BJT) Transistor NPN 45V 100mA 500mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 45V 100mA 500mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BC547CB1G-ND
Product Name Single Bipolar Transistors
Polarity NPN
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