Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC547B B1G

NPN silicon transistor for general-purpose switching and amplification, rated for 45 V collector-emitter voltage and 100 mA continuous collector current, with 500 mW power dissipation in a TO-92 package. Features a minimum DC current gain of 200 and maximum emitter-base voltage of 6 V. Complies with RoHS and UL 94 V-0, and meets JESD 201 class 1A whisker test requirements. Package dimensions comply with standard TO-92 form factor for through-hole mounting.