Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC337-40 B1G

Description
Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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NPN silicon transistor for switching and audio frequency amplifier applications in a TO-92 plastic package, rated for 800 mA continuous collector current, 45 V collector-emitter voltage, and 625 mW total power dissipation. Current gain (hFE) ranges from 250 to 630 at VCE = 5 V and IC = 100 mA. Features include a junction and storage temperature range of -55°C to +150°C, RoHS compliance, and halogen-free green compound. Package dimensions conform to TO-92 standards with matte tin-plated leads solderable to MIL-STD-202 requirements. Moisture sensitivity level is 1.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for switching and audio frequency amplifier applications in a TO-92 plastic package, rated for 800 mA continuous collector current, 45 V collector-emitter voltage, and 625 mW total power dissipation. Current gain (hFE) ranges from 250 to 630 at VCE = 5 V and IC = 100 mA. Features include a junction and storage temperature range of -55°C to +150°C, RoHS compliance, and halogen-free green compound. Package dimensions conform to TO-92 standards with matte tin-plated leads solderable to MIL-STD-202 requirements. Moisture sensitivity level is 1.

Suppliers

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Product
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Single Bipolar Transistors - BC337-40B1G-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC337-40B1G-ND
Single Bipolar Transistors BC337-40B1G-ND
Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BC337-40B1G-ND
Product Name Single Bipolar Transistors
Polarity NPN
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