Taiwan Semiconductor Co., Ltd. Single Bipolar Transistors BC337-25 A1G

NPN silicon transistor for switching and audio frequency amplifier applications, packaged in a TO-92 small outline plastic case measuring 4.30 to 5.10 mm in height, 4.30 to 4.70 mm in width, and 12.50 to 14.50 mm in length. It has a collector-emitter voltage rating of 45 V, a collector current of 800 mA, and a power dissipation of 625 mW. The device has a DC current gain (hFE) range of 160 to 400 at 100 mA collector current and 5 V collector-emitter voltage. It supports a junction and storage temperature range of -55 to +150 ℃. The part is RoHS compliant and uses a green, halogen-free compound. Moisture sensitivity level is 1.