N-channel power MOSFET with 600V drain-source voltage, 4A continuous drain current, and 0.9Ω maximum on-state resistance, packaged in TO-252 (DPAK). It features super-junction technology, 100% UIL tested ruggedness, and complies with RoHS Directive 2011/65/EU and IEC 61249-2-21 halogen-free standards. Thermal resistance from junction to case is 3.4°C/W, and junction-to-ambient is 62°C/W on FR-4 PCB in still air. Operating junction and storage temperature range is -55°C to +150°C.
MOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TSM60NB900CP ROG |
| Product Name | MOSFET |
