Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET TSM60NB600CF C0G

Description
MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 8A
Description
MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 8A
Datasheet
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The TSM60NB600CF is an N-channel power MOSFET using Super-Junction technology, designed for high-efficiency switching applications such as power supplies and AC/DC LED lighting. It is housed in an ITO-220S package with a drain-source voltage rating of 600 V, a continuous drain current of 8 A at 25°C, and a maximum on-state resistance of 0.6 Ω. The device supports a pulsed drain current of 24 A and has a single-pulse avalanche energy of 121 mJ. Thermal resistance from junction to case is 3 °C/W, and junction-to-ambient is 62 °C/W. Operating junction and storage temperatures range from -55 °C to +150 °C. The part is RoHS compliant, halogen-free per IEC 61249-2-21, and certified to meet AEC-Q200.

Datasheet Summary
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The TSM60NB600CF is an N-channel power MOSFET using Super-Junction technology, designed for high-efficiency switching applications such as power supplies and AC/DC LED lighting. It is housed in an ITO-220S package with a drain-source voltage rating of 600 V, a continuous drain current of 8 A at 25°C, and a maximum on-state resistance of 0.6 Ω. The device supports a pulsed drain current of 24 A and has a single-pulse avalanche energy of 121 mJ. Thermal resistance from junction to case is 3 °C/W, and junction-to-ambient is 62 °C/W. Operating junction and storage temperatures range from -55 °C to +150 °C. The part is RoHS compliant, halogen-free per IEC 61249-2-21, and certified to meet AEC-Q200.

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MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 8A

MOSFET MOSFET, Single, N-Ch SJ G2, 600V, 8A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number TSM60NB600CF C0G
Product Name MOSFET
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