Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET TSM60N600CP

TSM60N600CP is an N-channel power MOSFET in a TO-252 (DPAK) package, rated for 600 V drain-source voltage, 8 A continuous drain current at 25°C, and a maximum on-state resistance of 0.6 Ω. It features super-junction technology for high performance and ruggedness, with a total gate charge of 13 nC and a single-pulsed avalanche energy of 100 mJ. The junction-to-case thermal resistance is 1.5 °C/W, and the junction-to-ambient thermal resistance is 62 °C/W on an FR-4 PCB in still air. The operating junction and storage temperature range is -55 to +150 °C. The device complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. Moisture sensitivity level is 3 per J-STD-020.