N-Channel Power MOSFET for power supply and lighting applications, available in TO-251 (IPAK) package. It has a drain-source voltage rating of 600V, a maximum on-state resistance of 2.5Ω, and a continuous drain current of 4.0A at 25°C. The device is rated for 70mJ single-pulsed avalanche energy and features a gate-source voltage limit of ±30V. It meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. Thermal resistance from junction to case is 2.5°C/W. The moisture sensitivity level is MSL 3 for the TO-252 (DPAK) package, but not explicitly stated for TO-251.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TSM4NB60CH C5 |
| Product Name | MOSFET |