Taiwan Semiconductor Manufacturing Company, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM4N60ECP ROG TSM4N60ECP ROG

Description
Manufacturer: Taiwan Semiconductor Win Source Part Number: 1065230-TSM4N60ECP ROG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 86.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 545pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet
Description
Manufacturer: Taiwan Semiconductor Win Source Part Number: 1065230-TSM4N60ECP ROG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 86.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 545pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM4N60ECP ROG - 1065230-TSM4N60ECP ROG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM4N60ECP ROG
1065230-TSM4N60ECP ROG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM4N60ECP ROG 1065230-TSM4N60ECP ROG
Manufacturer: Taiwan Semiconductor Win Source Part Number: 1065230-TSM4N60ECP ROG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 86.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 545pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Taiwan Semiconductor
Win Source Part Number: 1065230-TSM4N60ECP ROG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 86.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 545pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 600V, 4Amp, 2,5ohm N channel Mosfet

MOSFET 600V, 4Amp, 2,5ohm N channel Mosfet

Buy Now Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1065230-TSM4N60ECP ROG TSM4N60ECP ROG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM4N60ECP ROG MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 86200 milliwatts
Unlock Full Specs
to access all available technical data