Taiwan Semiconductor Manufacturing Company, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM3N80CI C0G TSM3N80CI C0G

Manufacturer: Taiwan Semiconductor Win Source Part Number: 1114741-TSM3N80CI C0G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ITO-220 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 696pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.2 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs