The TSM3N100CP is an N-channel power MOSFET rated for 1000 V drain-source voltage and 2.5 A continuous drain current at 25°C, with a maximum on-state resistance of 6 Ω. It is packaged in a TO-252 (DPAK) case with a moisture sensitivity level of 3 per J-STD-020. The device is avalanche-rated with 20 mJ single-pulse energy and 1.4 A current, and complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. Thermal resistance from junction to case is 1.26 °C/W, and junction-to-ambient is 62 °C/W on FR-4 PCB in still air. Operating junction and storage temperature ranges from -55 °C to +150 °C.
MOSFET Power MOSFET, N-CHAN 1000V, 2.5A, 6 Ohms
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TSM3N100CP ROG |
| Product Name | MOSFET |
