Taiwan Semiconductor Manufacturing Company, Ltd. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single TSM2N60ECP ROG

Description
Win Source Part Number: 1101459-TSM2N60ECP ROG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 52.1W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Taiwan Semiconductor Corporation Other Names: TSM2N60ECP ROGTR,TSM2N60ECP ROGDKR,TSM2N60ECPROG DKR,TSM2N60ECP ROGTR-ND,TSM2N60ECPR OGTR,TSM2N60ECP ROGCT-ND,TSM2N60ECP ROGCT,TSM2N60ECP ROGDKR-ND,TSM2N60ECP ROGCT Base Product Number: TSM2 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1101459-TSM2N60ECP ROG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 52.1W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Taiwan Semiconductor Corporation Other Names: TSM2N60ECP ROGTR,TSM2N60ECP ROGDKR,TSM2N60ECPROG DKR,TSM2N60ECP ROGTR-ND,TSM2N60ECPR OGTR,TSM2N60ECP ROGCT-ND,TSM2N60ECP ROGCT,TSM2N60ECP ROGDKR-ND,TSM2N60ECP ROGCT Base Product Number: TSM2 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1101459-TSM2N60ECP ROG - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1101459-TSM2N60ECP ROG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1101459-TSM2N60ECP ROG
Win Source Part Number: 1101459-TSM2N60ECP ROG Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 52.1W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Taiwan Semiconductor Corporation Other Names: TSM2N60ECP ROGTR,TSM2N60ECP ROGDKR,TSM2N60ECPROG DKR,TSM2N60ECP ROGTR-ND,TSM2N60ECPR OGTR,TSM2N60ECP ROGCT-ND,TSM2N60ECP ROGCT,TSM2N60ECP ROGDKR-ND,TSM2N60ECP ROGCT Base Product Number: TSM2 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1101459-TSM2N60ECP ROG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 52.1W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Taiwan Semiconductor Corporation
Other Names: TSM2N60ECP ROGTR,TSM2N60ECP ROGDKR,TSM2N60ECPROGDKR,TSM2N60ECP ROGTR-ND,TSM2N60ECPROGTR,TSM2N60ECP ROGCT-ND,TSM2N60ECP ROGCT,TSM2N60ECP ROGDKR-ND,TSM2N60ECPROGCT
Base Product Number: TSM2
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET 600V 2Amp 4ohm N channel Power Mosfet

MOSFET 600V 2Amp 4ohm N channel Power Mosfet

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1101459-TSM2N60ECP ROG TSM2N60ECP ROG
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET
Polarity N-Channel
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