Taiwan Semiconductor Manufacturing Company, Ltd. Single FETs, MOSFETs TSM2301ACX RFG

Description
MOSFET P-CHANNEL 20V 2.8A SOT23
Request a Quote Datasheet
Description
MOSFET P-CHANNEL 20V 2.8A SOT23
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TSM2301ACX RFG - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TSM2301ACX RFG
Single FETs, MOSFETs TSM2301ACX RFG
MOSFET P-CHANNEL 20V 2.8A SOT23

MOSFET P-CHANNEL 20V 2.8A SOT23

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM2301ACX RFG - 1114720-TSM2301ACX RFG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM2301ACX RFG
1114720-TSM2301ACX RFG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM2301ACX RFG 1114720-TSM2301ACX RFG
Manufacturer: Taiwan Semiconductor Win Source Part Number: 1114720-TSM2301ACX RFG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 4.5nC @ 4.5V Max Input Capacitance: 480pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 130 mOhm @ 2.8A, 4.5V Alternative Parts (Cross-Reference): DMG2301U-7; AO3423; AO3423L; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Taiwan Semiconductor
Win Source Part Number: 1114720-TSM2301ACX RFG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Max Input Capacitance: 480pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 130 mOhm @ 2.8A, 4.5V
Alternative Parts (Cross-Reference): DMG2301U-7; AO3423; AO3423L;
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 20V P channel Mosfet

MOSFET 20V P channel Mosfet

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number TSM2301ACX RFG 1114720-TSM2301ACX RFG TSM2301ACX RFG
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM2301ACX RFG MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 2800 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

80 V, P-channel Trench MOSFET - BUK6D215-80PX - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
Package Type SOT1220
View Details
CSD18533Q5A 60V N-Channel NexFET Power MOSFET - CSD18533Q5A - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 60 volts
rDS(on) 0.0085 ohms
View Details
8 suppliers
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810024SCLI - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers