Taiwan Semiconductor Manufacturing Company, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM10N06CP ROG TSM10N06CP ROG

Description
Manufacturer: Taiwan Semiconductor Win Source Part Number: 1114709-TSM10N06CP ROG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10.5nC @ 4.5V Max Input Capacitance: 1100pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
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Description
Manufacturer: Taiwan Semiconductor Win Source Part Number: 1114709-TSM10N06CP ROG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10.5nC @ 4.5V Max Input Capacitance: 1100pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM10N06CP ROG - 1114709-TSM10N06CP ROG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM10N06CP ROG
1114709-TSM10N06CP ROG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM10N06CP ROG 1114709-TSM10N06CP ROG
Manufacturer: Taiwan Semiconductor Win Source Part Number: 1114709-TSM10N06CP ROG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 10.5nC @ 4.5V Max Input Capacitance: 1100pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Taiwan Semiconductor
Win Source Part Number: 1114709-TSM10N06CP ROG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.5nC @ 4.5V
Max Input Capacitance: 1100pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 65 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1114709-TSM10N06CP ROG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TSM10N06CP ROG
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 45000 milliwatts
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