Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar Transistors - BJT TSC5988CT

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Bipolar Transistors - BJT NPN Silicon Planar Med Pwr Transistor
Description
Bipolar Transistors - BJT NPN Silicon Planar Med Pwr Transistor
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NPN silicon planar medium power transistor in a TO-92 package, with a collector-base voltage rating of 150 V, collector-emitter voltage of 60 V, and continuous collector current of 5 A. The device has a power dissipation of 1.0 W and operates over a junction temperature range of -55 to +150 °C. It features a DC current gain from 70 to 300 depending on collector current, a collector-emitter saturation voltage up to 350 mV at 5 A, and a transition frequency of 130 MHz. The TO-92 package measures 4.30 to 4.70 mm in body width and 14.30 mm in height. It meets RoHS standards.

Datasheet Summary
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NPN silicon planar medium power transistor in a TO-92 package, with a collector-base voltage rating of 150 V, collector-emitter voltage of 60 V, and continuous collector current of 5 A. The device has a power dissipation of 1.0 W and operates over a junction temperature range of -55 to +150 °C. It features a DC current gain from 70 to 300 depending on collector current, a collector-emitter saturation voltage up to 350 mV at 5 A, and a transition frequency of 130 MHz. The TO-92 package measures 4.30 to 4.70 mm in body width and 14.30 mm in height. It meets RoHS standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
TSC5988CT
Bipolar Transistors - BJT TSC5988CT
Bipolar Transistors - BJT NPN Silicon Planar Med Pwr Transistor

Bipolar Transistors - BJT NPN Silicon Planar Med Pwr Transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number TSC5988CT
Product Name Bipolar Transistors - BJT
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