Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar Transistors - BJT TSC5804DCP ROG

Description
Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode
Description
Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode
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TSC5804DCP ROG is a high-voltage fast-switching NPN power transistor in a TO-252 (DPAK) package, rated for a collector-emitter voltage of 450 V and a collector-base voltage of 1050 V, with a continuous collector current of 5 A and a peak collector current of 8 A. It features a collector-emitter saturation voltage of up to 2.0 V at 3.5 A collector current and 1 A base current, and a maximum junction temperature of +150°C. The device is RoHS compliant, halogen-free, and meets moisture sensitivity level 3 per J-STD-020. Thermal resistance from junction to case is 2.78 °C/W. It is intended for use in electronic ballasts and switch-mode power supplies.

Datasheet Summary
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TSC5804DCP ROG is a high-voltage fast-switching NPN power transistor in a TO-252 (DPAK) package, rated for a collector-emitter voltage of 450 V and a collector-base voltage of 1050 V, with a continuous collector current of 5 A and a peak collector current of 8 A. It features a collector-emitter saturation voltage of up to 2.0 V at 3.5 A collector current and 1 A base current, and a maximum junction temperature of +150°C. The device is RoHS compliant, halogen-free, and meets moisture sensitivity level 3 per J-STD-020. Thermal resistance from junction to case is 2.78 °C/W. It is intended for use in electronic ballasts and switch-mode power supplies.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
TSC5804DCP ROG
Bipolar Transistors - BJT TSC5804DCP ROG
Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode

Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number TSC5804DCP ROG
Product Name Bipolar Transistors - BJT
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